Electrodeposited Nano-Twins Copper Layer and Method of Fabricating the Same
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20130122326 | zh_TW |
| dc.contributor.author | CHEN Chih | en_US |
| dc.contributor.author | TU King-Ning | en_US |
| dc.contributor.author | LIU Taochi | en_US |
| dc.date.accessioned | 2014-12-16T06:14:59Z | |
| dc.date.available | 2014-12-16T06:14:59Z | |
| dc.date.issued | 2013-05-16 | en_US |
| dc.description.abstract | An electrodeposited nano-twins copper layer, a method of fabricating the same, and a substrate comprising the same are disclosed. According to the present invention, at least 50% in volume of the electrodeposited nano-twins copper layer comprises plural grains adjacent to each other, wherein the said grains are made of stacked twins, the angle of the stacking directions of the nano-twins between one grain and the neighboring grain is between 0 to 20 degrees. The electrodeposited nano-twins copper layer of the present invention is highly reliable with excellent electro-migration resistance, hardness, and Young's modulus. Its manufacturing method is also fully compatible to semiconductor process. | zh_TW |
| dc.identifier.govdoc | C30B007/12 | zh_TW |
| dc.identifier.govdoc | C30B029/02 | zh_TW |
| dc.identifier.govdoc | C30B029/60 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105050 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Electrodeposited Nano-Twins Copper Layer and Method of Fabricating the Same | zh_TW |
| dc.type | Patents | en_US |