半導體元件之內連接結構

Abstract

一種半導體元件之內連接結構，架構於半導體基材內。內連接結構包括第一矽晶直通孔以及第二矽晶直通孔。第一矽晶直通孔貫穿半導體基材。第二矽晶直通孔貫穿半導體基材。第一矽晶直通孔與第二矽晶直通孔相互間隔一距離。其中，該距離介於2μm以及40μm之間。 An interconnection structure of a semiconductor device is provided, where the interconnection structure is constructed in a semiconductor substrate. The interconnection structure includes a first through silicon via and a second through silicon via both penetrating the semiconductor substrate, and the first through silicon via is spaced from the second through silicon via by a distance ranged from 2μm to 40μm.