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The Impact of Uniaxial Strain on Low Frequency Noise of Nanoscale PMOSFETs with e-SiGe and i-SiGe Source/Drain

dc.contributor.authorYeh, Kuo-Liangen_US
dc.contributor.authorHong, Wei-Lunen_US
dc.contributor.authorGuo, Jyh-Chyurnen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.date.accessioned2014-12-08T15:39:00Z
dc.date.available2014-12-08T15:39:00Z
dc.date.issued2010en_US
dc.identifier.isbn978-1-4244-6057-1en_US
dc.identifier.issn0149-645Xen_US
dc.identifier.journal2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/26698
dc.identifier.wosnumberWOS:000288196502125
dc.language.isoen_USen_US
dc.titleThe Impact of Uniaxial Strain on Low Frequency Noise of Nanoscale PMOSFETs with e-SiGe and i-SiGe Source/Drainen_US
dc.typeMeeting Abstracten_US

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