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Improving Crystalline Quality of Non-Vacuum Processed Cu(In,Ga) Se-2 Thin Films by Femtosecond Laser Annealing

dc.citation.woscount0en_US
dc.contributor.authorLi, Jia-Xingen_US
dc.contributor.authorShe, Nian-Zuen_US
dc.contributor.authorChang, Yu-Hsuanen_US
dc.contributor.authorChen, Shih-Chenen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWu, Kuang-Hsiungen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2017-04-21T06:49:16Z
dc.date.available2017-04-21T06:49:16Z
dc.date.issued2016en_US
dc.description.abstractWe demonstrate the advantages of femtosecond laser annealing on non-vacuum CIGS thin films. The PL spectra implied some defect-levels or band-fluctuations were eliminated, and the conversion efficiency and ideal factor were enhanced after laser annealing.en_US
dc.identifier.isbn978-1-9435-8011-8en_US
dc.identifier.issn2160-9020en_US
dc.identifier.journal2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/134622
dc.identifier.wosnumberWOS:000391286401258en_US
dc.language.isoen_USen_US
dc.titleImproving Crystalline Quality of Non-Vacuum Processed Cu(In,Ga) Se-2 Thin Films by Femtosecond Laser Annealingen_US
dc.typeProceedings Paperen_US

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