LATERAL-EPITAXIAL-OVERGROWTH THIN-FILM LED WITH NANOSCALE-ROUGHENED STRUCTURE AND METHOD FOR FABRICATING THE SAME
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20120273752 | zh_TW |
| dc.contributor.author | LEE Chia-Yu | en_US |
| dc.contributor.author | Wang Chao-Hsun | en_US |
| dc.contributor.author | Chiu Ching-Hsueh | en_US |
| dc.contributor.author | Kuo Hao-Chung | en_US |
| dc.date.accessioned | 2014-12-16T06:15:05Z | |
| dc.date.available | 2014-12-16T06:15:05Z | |
| dc.date.issued | 2012-11-01 | en_US |
| dc.description.abstract | The present invention discloses a lateral-epitaxial-overgrowth thin-film LED with a nanoscale-roughened structure and a method for fabricating the same. The lateral-epitaxial-overgrowth thin-film LED with a nanoscale-roughened structure comprises a substrate, a metal bonding layer formed on the substrate, a first electrode formed on the metal bonding layer, a semiconductor structure formed on the first electrode with a lateral-epitaxial-growth technology, and a second electrode formed on the semiconductor structure, wherein a nanoscale-roughened structure is formed on the semiconductor structure except the region covered by the second electrode. The present invention uses lateral epitaxial growth to effectively inhibit the stacking faults and reduce the thread dislocation density in the semiconductor structure to improve the crystallization quality of the light-emitting layer and reduce leakage current. Meanwhile, the surface roughened structure on the semiconductor structure can promote the external quantum efficiency. | zh_TW |
| dc.identifier.govdoc | H01L033/04 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105125 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | LATERAL-EPITAXIAL-OVERGROWTH THIN-FILM LED WITH NANOSCALE-ROUGHENED STRUCTURE AND METHOD FOR FABRICATING THE SAME | zh_TW |
| dc.type | Patents | en_US |