Time-Correlated Crosstalk Measurements between CMOS Single-Photon Avalanche Diodes
| dc.citation.epage | 186 | en_US |
| dc.citation.spage | 185 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Wu, Dai-Rong | en_US |
| dc.contributor.author | Tsai, Chia-Ming | en_US |
| dc.contributor.author | Lin, Sheng-Di | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2019-04-02T06:04:46Z | |
| dc.date.available | 2019-04-02T06:04:46Z | |
| dc.date.issued | 2018-01-01 | en_US |
| dc.description.abstract | We investigate time-resolved crosstalk probability between single-photon avalanche diodes in CMOS technology. The time-correlated crosstalk measurements reveal an unusual double-peak feature. This behavior becomes more significant at higher excess bias voltages and shorter device-to-device distance and its physical reason will be discussed. | en_US |
| dc.identifier.issn | 2160-5033 | en_US |
| dc.identifier.journal | 2018 INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS (OMN) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/150925 | |
| dc.identifier.wosnumber | WOS:000454732000090 | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | Single-photon avalanche diodes | en_US |
| dc.subject | crosstalk | en_US |
| dc.subject | time correlation | en_US |
| dc.subject | CMOS technology | en_US |
| dc.subject | breakdown flash | en_US |
| dc.title | Time-Correlated Crosstalk Measurements between CMOS Single-Photon Avalanche Diodes | en_US |
| dc.type | Proceedings Paper | en_US |
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