Fabrication and characterization of excimer laser crystallized double-gate low-temperature poly-silicon thin film transistors
| dc.citation.epage | 532 | en_US |
| dc.citation.spage | 529 | en_US |
| dc.contributor.author | Tsai, Chun-Chien | en_US |
| dc.contributor.author | Wei, Kai-Fang | en_US |
| dc.contributor.author | Lee, Yao-Jen | en_US |
| dc.contributor.author | Lee, I-Che | en_US |
| dc.contributor.author | Chen, Hsu-Hsin | en_US |
| dc.contributor.author | Wang, Jyh-Liang | en_US |
| dc.contributor.author | Chen, Hsai-Wei | en_US |
| dc.contributor.author | Cheng, Huang-Chung | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:12:06Z | |
| dc.date.available | 2014-12-08T15:12:06Z | |
| dc.date.issued | 2007 | en_US |
| dc.description.abstract | In this letter, high-performance low-temperature poly-Silicon (LTPS) thin film transistors (TFTs) with double-gate (DG) structure and lateral silicon grains have been demonstrated by excimer laser crystallization (ELC). Therefore, the proposeed ELC DG TFTs exhibited better current-voltage characteristics as compared with the conventional solid-phase crystallized (SPC) poly-Si double-gate TFTs or conventional ELC top-gate (TG) TFTs. | en_US |
| dc.identifier.isbn | 978-957-28522-4-8 | en_US |
| dc.identifier.journal | IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9279 | |
| dc.identifier.wosnumber | WOS:000258177700137 | |
| dc.language.iso | en_US | en_US |
| dc.title | Fabrication and characterization of excimer laser crystallized double-gate low-temperature poly-silicon thin film transistors | en_US |
| dc.type | Proceedings Paper | en_US |
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