RF characteristics of BJT devices with selectively or fully ion-implanted collector

dc.citation.epage	164	en_US
dc.citation.spage	161	en_US
dc.contributor.author	Meng, C. C.	en_US
dc.contributor.author	Su, J. Y.	en_US
dc.contributor.author	Tsou, B. C.	en_US
dc.contributor.author	Huang, G. W.	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.date.accessioned	2014-12-08T15:25:29Z
dc.date.available	2014-12-08T15:25:29Z
dc.date.issued	2005	en_US
dc.description.abstract	A selectively ion-implanted collector (SIC) is implemented in a 0.8 um BiCMOS process to improve the RF characteristics of the BJT devices. The SIC BJT device has better ft and fmax than the FIC (fully ion-implanted collector) BJT device because the extrinsic base-collector capacitance is reduced by the SIC process. The fmax is 9.5GHz and ft is 7.8 GHz for the SIC BJT device while the fmax is 7.2 GHz and fmax is 4.5 GHz for the FIC BJT device when biased at Vce=3.6 V and Jc=0.09 mA/um(2). The nois parameters are the same for both BJT devices but the associated gain is higher for the SIC BJT device.	en_US
dc.identifier.isbn	88-902012-0-7	en_US
dc.identifier.journal	GAAS 2005: 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Conference Proceedings	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/17884
dc.identifier.wosnumber	WOS:000238139100037
dc.language.iso	en_US	en_US
dc.title	RF characteristics of BJT devices with selectively or fully ion-implanted collector	en_US
dc.type	Proceedings Paper	en_US

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