深層能階的載子補捉對於光學引發砷化銦量子點內電荷儲存之影響
| dc.contributor.author | 陳振芳 | en_US |
| dc.contributor.author | CHEN JENN-FANG | en_US |
| dc.contributor.department | 國立交通大學電子物理學系（所） | zh_TW |
| dc.date.accessioned | 2014-12-13T10:29:05Z | |
| dc.date.available | 2014-12-13T10:29:05Z | |
| dc.date.issued | 2014 | en_US |
| dc.description.sponsorship | 科技部 | zh_TW |
| dc.identifier.govdoc | MOST103-2112-M009-006 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=8359218&docId=448014 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/88871 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 深層能階的載子補捉對於光學引發砷化銦量子點內電荷儲存之影響 | zh_TW |
| dc.title | Effects of Dynamic Trapping and Detrapping of Deep Levels on the Optically Induced Charge Storage in Inas Quantum Dots (Qds) | en_US |
| dc.type | Plan | en_US |
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