<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css"> Skip to main content

METHOD OF SEMICONDUCTOR MANUFACTURING PROCESS

dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20130001752zh_TW
dc.contributor.authorWu YewChung Sermonen_US
dc.contributor.authorChen Yu-Chungen_US
dc.date.accessioned2014-12-16T06:15:02Z
dc.date.available2014-12-16T06:15:02Z
dc.date.issued2013-01-03en_US
dc.description.abstractThe present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming on the growing substrate to have plural grooves; forming a semiconductor element layer on the growing substrate; and changing the temperature of the growing substrate and the semiconductor element layer so as to separate the semiconductor element layer from the growing substrate.zh_TW
dc.identifier.govdocH01L029/06zh_TW
dc.identifier.govdocH01L021/302zh_TW
dc.identifier.govdocH01L021/26zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/105093
dc.language.isozh_TWen_US
dc.titleMETHOD OF SEMICONDUCTOR MANUFACTURING PROCESSzh_TW
dc.typePatentsen_US

Files

Original bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
20130001752.pdf
Size:
406.23 KB
Format:
Adobe Portable Document Format

License bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed to upon submission
Description: