40 GHz Phase Shifter based on Semiconductor Laser
| dc.citation.epage | 521 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 520 | en_US |
| dc.citation.volume | 44 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Peng, P. C. | en_US |
| dc.contributor.author | Wu, F. M. | en_US |
| dc.contributor.author | Lin, C. T. | en_US |
| dc.contributor.author | Chen, J. H. | en_US |
| dc.contributor.author | Kao, W. C. | en_US |
| dc.contributor.author | Shih, P. T. | en_US |
| dc.contributor.author | Jiang, W. J. | en_US |
| dc.contributor.author | Kuo, H. C. | en_US |
| dc.contributor.author | Chi, S. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:12:18Z | |
| dc.date.available | 2014-12-08T15:12:18Z | |
| dc.date.issued | 2008-04-10 | en_US |
| dc.description.abstract | This investigation experimentally demonstrates a 40 GHz phase shifter based on a semiconductor laser. The phase shift is achieved by adjusting the bias current and wavelength detuning. The device has an optical delay of 23 ps and a phase shift of about 331 degrees. | en_US |
| dc.identifier.doi | 10.1049/el:20080457 | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1049/el:20080457 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9461 | |
| dc.identifier.wosnumber | WOS:000255414900011 | |
| dc.language.iso | en_US | en_US |
| dc.title | 40 GHz Phase Shifter based on Semiconductor Laser | en_US |
| dc.type | Article | en_US |