功率增益截止頻率高於100GHz之高頻氮化鋁/氮化鎵高電子遷移率電晶體技術開發與研究
| dc.contributor.author | 張翼 | en_US |
| dc.contributor.author | CHANG EDWARD YI | en_US |
| dc.contributor.department | 國立交通大學材料科學與工程學系（所） | zh_TW |
| dc.date.accessioned | 2014-12-13T10:42:46Z | |
| dc.date.available | 2014-12-13T10:42:46Z | |
| dc.date.issued | 2014 | en_US |
| dc.description.sponsorship | 科技部 | zh_TW |
| dc.identifier.govdoc | NSC102-2221-E009-095-MY2 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=8125233&docId=433553 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/99371 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 功率增益截止頻率高於100GHz之高頻氮化鋁/氮化鎵高電子遷移率電晶體技術開發與研究 | zh_TW |
| dc.title | Development and Research of AlN/GaN HEMT with Fmax 100GHz for High Frequency Applications | en_US |
| dc.type | Plan | en_US |
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