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LABEL-FREE SENSOR

dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20100237885zh_TW
dc.contributor.authorMeng, Hsin- Feien_US
dc.contributor.authorHong, Sheng-Fuen_US
dc.contributor.authorChao, Yu-Chiangen_US
dc.contributor.authorLiu, Chien-Chengen_US
dc.contributor.authorLiu, Wen-Hsingen_US
dc.contributor.authorChang, Cheng-Chungen_US
dc.contributor.authorLi, Jan-Haoen_US
dc.contributor.authorDai, Ming-Zhien_US
dc.date.accessioned2014-12-16T06:15:32Z
dc.date.available2014-12-16T06:15:32Z
dc.date.issued2010-09-23en_US
dc.description.abstractA label-free sensor is disclosed. The label-free sensor comprises a substrate, a first electrode formed on the substrate, a second electrode formed on the substrate and spaced away from the first electrode, and a semiconductor layer formed on the substrate and is in contact with the first electrode and the second electrode, wherein the semiconductor layer has a plurality of probe groups, which are bonded to the semiconductor layer by functionalization, for sensing a coupling-specific substance, which has bonding specificity with the probe groups. The semiconductor layer of the label-free sensor of the present invention is bonded with probe groups, and the detection of detected object is performed in instant, quick, rapid, and sensitive manner by measuring variation in electric current, thereby avoiding the use of the fluorescent reading equipment for reading fluorescent signals.zh_TW
dc.identifier.govdocG01R019/00zh_TW
dc.identifier.govdocH01L029/12zh_TW
dc.identifier.govdocH01L051/30zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/105381
dc.language.isozh_TWen_US
dc.titleLABEL-FREE SENSORzh_TW
dc.typePatentsen_US

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