氫化物氣相磊晶之側向蔓延磊晶技術之研究
| dc.contributor.author | 施敏 | en_US |
| dc.contributor.author | SZE SIMON MIN | en_US |
| dc.contributor.department | 交通大學電子工程系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:36:52Z | |
| dc.date.available | 2014-12-13T10:36:52Z | |
| dc.date.issued | 1999 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC88-2215-E009-038 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=417924&docId=74127 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/94235 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 氫化物 | zh_TW |
| dc.subject | 選擇性成長 | zh_TW |
| dc.subject | 三五族化合物 | zh_TW |
| dc.subject | 側向蔓延成長 | zh_TW |
| dc.subject | 磊晶 | zh_TW |
| dc.subject | Hydride | en_US |
| dc.subject | Selective growth | en_US |
| dc.subject | Ⅲ-V compound | en_US |
| dc.subject | Lateral overgrowth | en_US |
| dc.subject | Epitaxy | en_US |
| dc.title | 氫化物氣相磊晶之側向蔓延磊晶技術之研究 | zh_TW |
| dc.title | Investigation of the Epitaxial Lateral Overgrowth by Hydride Vapor Phase Epitaxial Growth | en_US |
| dc.type | Plan | en_US |