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半導體氮(磷)化物化學蒸鍍中的自由基及中間物之結構,動力學及能階(III)(中加國合計畫)

dc.contributor.author李遠鵬en_US
dc.contributor.authorLEE YUAN-PERNen_US
dc.contributor.department交通大學應用化學系zh_TW
dc.date.accessioned2014-12-13T10:32:02Z
dc.date.available2014-12-13T10:32:02Z
dc.date.issued2004en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC93-2113-M009-018zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=981064&docId=182710en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/91327
dc.language.isozh_TWen_US
dc.title半導體氮(磷)化物化學蒸鍍中的自由基及中間物之結構,動力學及能階(III)(中加國合計畫)zh_TW
dc.titleChemical Vapor Deposition of Semiconductor Nitrides and Phosphides:Structure,Kinetics,and Energetics of Radical s and Intermediates (III)en_US
dc.typePlanen_US

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