Very low noise in 90nm node RF MOSFETs using a new layout

Abstract

We have directly measured a record low minimum noise figure (NFmin) of 0.46 dB at 10 GM, along with a high 16.6 dB Associated Gain, in an 8-finger 90 nm node MOSFET (L-G = 65nm) without de-embedding. At 18 GHz, NFmin was 0.83 dB with 13.5 dB gain. This was achieved using a microstrip line layout to screen the RF noise generated by the lossy substrate.