A NEW PROFILING TECHNIQUE FOR CHARACTERIZING HOT-CARRIER-INDUCED OXIDE DAMAGES IN LDD-N-MOSFETS
| dc.citation.epage | 368 | en_US |
| dc.citation.issue | 1-4 | en_US |
| dc.citation.spage | 365 | en_US |
| dc.citation.volume | 28 | en_US |
| dc.contributor.author | LEE, GH | en_US |
| dc.contributor.author | SU, JS | en_US |
| dc.contributor.author | CHUNG, SS | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:20Z | |
| dc.date.available | 2014-12-08T15:03:20Z | |
| dc.date.issued | 1995-06-01 | en_US |
| dc.description.abstract | Previous studies showed that simultaneous determination of the interface states (N-it) and oxide-trapped charges (Q(ox)) in the vicinity of drain side of MOS devices are rather difficult. A new technique which allows the simultaneous characterization of the spatial distributions of both N-it and Q(ox) will be presented. Submicron LDD n-MOS devices were tested and charge pumping (CP) measurements were performed. The spatial distributions of both N-it and Q(ox) have been justified by 2-D device simulation results. Results show that simulated drain current characteristics compare well with experimental data. Moreover, results show that fixed-oxide charge effect is less pronounced to the device degradation in LDD n-MOS devices. | en_US |
| dc.identifier.issn | 0167-9317 | en_US |
| dc.identifier.journal | MICROELECTRONIC ENGINEERING | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1880 | |
| dc.identifier.wosnumber | WOS:A1995RD49200076 | |
| dc.language.iso | en_US | en_US |
| dc.title | A NEW PROFILING TECHNIQUE FOR CHARACTERIZING HOT-CARRIER-INDUCED OXIDE DAMAGES IN LDD-N-MOSFETS | en_US |
| dc.type | Article; Proceedings Paper | en_US |