GaN光電及微波元件之研製---子計畫III：氮化鎵場效電晶體之研製 (I)

dc.contributor.author	張守進	en_US
dc.contributor.author	CHANG SHOOU-JINN	en_US
dc.contributor.department	交通大學光電工程研究所	zh_TW
dc.date.accessioned	2014-12-13T10:48:24Z
dc.date.available	2014-12-13T10:48:24Z
dc.date.issued	2000	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.identifier.govdoc	NSC89-2215-E009-018	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=542521&docId=99694	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/101337
dc.language.iso	zh_TW	en_US
dc.subject	氮化鎵	zh_TW
dc.subject	場效電晶體	zh_TW
dc.subject	光電元件	zh_TW
dc.subject	微波元件	zh_TW
dc.subject	GaN	en_US
dc.subject	Field effect transistor	en_US
dc.subject	Optoelectronic device	en_US
dc.subject	Microwave device	en_US
dc.title	GaN光電及微波元件之研製---子計畫III：氮化鎵場效電晶體之研製 (I)	zh_TW
dc.title	The Study of GaN-Based Field Effect Transistor (I)	en_US
dc.type	Plan	en_US

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