InGaAs Metal-Oxide-Semiconductor FETs with Self-Aligned Ni-Alloy Source/Drain

Abstract

N-type InGaAs MOSFETs with self-aligned nickel-InGaAs alloy and ex-situ ALD Al2O3 as gate dielectrics was successfully fabricated. The InGaAs MOSFETs exhibit an S/D resistance (RSD) that is lower than that in P-N junction devices due to the low Schottky barrier height and the peak mobility was about 1138 cm(2)/V-s and the interface state density (D-it) was about 10(12) cm(-2)eV(-1) at ET = EV + 0.6 eV by using full-conductance method