Oxygen and nitrogen co-doped GeSbTe thin films for phase-change optical recording

Abstract

Nitrogen and oxygen co-doped GeSbTe films for phase-change optical recording are investigated. It is found that optical properties of amorphous and crystalline state are similar to that of GeSbTe, crystallization temperature increases and crystalline microstructure is refined which indicate a nucleation rate increases by co-doping. The carrier-to-noise ratio (CNR) and erasability of phase-change optical disks are improved being up to 52 dB and 35 dB, respectively, by using an appropriate co-doping concentration in the recording layer.