High-side driver circuit
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20130241601 | zh_TW |
| dc.contributor.author | CHEN Tsung-Lin | en_US |
| dc.contributor.author | CHANG Edward Yi | en_US |
| dc.contributor.author | CHIENG Wei-Hua | en_US |
| dc.contributor.author | CHENG Stone | en_US |
| dc.contributor.author | JENG Shyr-Long | en_US |
| dc.contributor.author | CHANG Che-Wei | en_US |
| dc.date.accessioned | 2014-12-16T06:14:55Z | |
| dc.date.available | 2014-12-16T06:14:55Z | |
| dc.date.issued | 2013-09-19 | en_US |
| dc.description.abstract | The present invention provides a high-side driver circuit including a power transistor, the first transistor, the second transistor, the second capacitor, the second diode, a start-up circuit. The start-up circuit is coupled between a resistor and the second capacitor to complete a gate driving circuit. And, the aforementioned resistor can either be the gate resistance of the power transistor or an external resistor. The design of start-up circuit enables the functionality of the bootstrap capacitor of being charged to a designate voltage level. Thus, the depletion-mode transistor can be controlled to turn on/off without a floating voltage source or a negative voltage source. | zh_TW |
| dc.identifier.govdoc | H03K003/00 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104996 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | High-side driver circuit | zh_TW |
| dc.type | Patents | en_US |