Short-Channel ZnON Thin-Film Transistors with Film Profile Engineering
| dc.citation.epage | 67 | en_US |
| dc.citation.spage | 66 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Kuan, Chin-I | en_US |
| dc.contributor.author | Lin, Horng-Chih | en_US |
| dc.contributor.author | Li, Pei-Wen | en_US |
| dc.contributor.author | Huang, Tiao-Yuan | en_US |
| dc.contributor.department | 電機學院 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | College of Electrical and Computer Engineering | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2017-04-21T06:48:46Z | |
| dc.date.available | 2017-04-21T06:48:46Z | |
| dc.date.issued | 2016 | en_US |
| dc.description.abstract | Short-channel zinc oxynitride (ZnON) thin-film transistors (TFTs) were fabricated based on the film profile engineering in combination with e-beam lithographical patterning. ZnON films were deposited using reactive magnetron sputtering in N-2/O-2 ambient and exhibit a Hall mobility of 95 cm(2)/V-s. A ZnON TFT with channel length of 147nm shows high on/off current ratio of 5x10(7) and field-effect mobility of 9.1 cm(2)/Vs, which are superior or comparable to their counterparts of IGZO or ZnO TFTs. | en_US |
| dc.identifier.isbn | 978-1-5090-0726-4 | en_US |
| dc.identifier.journal | 2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/134677 | |
| dc.identifier.wosnumber | WOS:000391250500029 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Short-Channel ZnON Thin-Film Transistors with Film Profile Engineering | en_US |
| dc.type | Proceedings Paper | en_US |
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