Effects of plasma treatment on the precipitation of fluorine-doped silicon oxide
| dc.citation.epage | 560 | en_US |
| dc.citation.issue | 2-3 | en_US |
| dc.citation.spage | 555 | en_US |
| dc.citation.volume | 69 | en_US |
| dc.contributor.author | Wu, Jun | en_US |
| dc.contributor.author | Wang, Ying-Lang | en_US |
| dc.contributor.author | Kua, Cheng-Tzu | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:44:44Z | |
| dc.date.available | 2014-12-08T15:44:44Z | |
| dc.date.issued | 2008-02-01 | en_US |
| dc.description.abstract | Precipitates were observed on the surface of fluorine-doped silicon oxide (SiOF) films. These precipitates are flake-type and hexagonal in shape, showing up rapidly after initiation, and clustered at the wafer center. Post-deposition N(2)O plasma treatment (post-plasma treatment) was found to be most effective in inhibiting the appearance of precipitates. In this paper, effects of post-deposition N(2)O plasma treatment on the suppression of precipitates and stabilities of SiOF film were studied. X-ray photoelectron spectroscopy (XPS) analyses were conducted to investigate the changes in surface composition of SiOF films after N(2)O plasma treatment. The surface morphology of the film was characterized by atomic force microscopy (AFM). Cross-sectional transmission electron microscopy (TEM) images showed that a surface layer of 150 A was generated after N(2)O plasma treatment. The changes on surface structures of SiOF films caused by N(2)O plasma treatment and the consequent inhibition of precipitate formation were discussed. (c) 2007 Elsevier Ltd. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.jpcs.2007.11.020 | en_US |
| dc.identifier.issn | 0022-3697 | en_US |
| dc.identifier.journal | JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.jpcs.2007.11.020 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30198 | |
| dc.identifier.wosnumber | WOS:000253874700064 | |
| dc.language.iso | en_US | en_US |
| dc.subject | electronic materials | en_US |
| dc.subject | semiconductor | en_US |
| dc.subject | thin film | en_US |
| dc.subject | vapor deposition | en_US |
| dc.subject | defect | en_US |
| dc.title | Effects of plasma treatment on the precipitation of fluorine-doped silicon oxide | en_US |
| dc.type | Article; Proceedings Paper | en_US |