Model based Sub-Resolution Assist Features Using an Inverse Lithography Method
| dc.citation.volume | 7140 | en_US |
| dc.contributor.author | Yu, Jue-Chin | en_US |
| dc.contributor.author | Yu, Peichen | en_US |
| dc.contributor.author | Chao, Hsueh-Yung | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:44:57Z | |
| dc.date.available | 2014-12-08T15:44:57Z | |
| dc.date.issued | 2008 | en_US |
| dc.description.abstract | The conventional segment-based OPC approach has been applied successfully for many CMOS generations and is currently favored. However, Inverse lithography technology (ILT) is a promising candidate for next-generation optical proximity correction (OPC). Still, there are issues that need to be thoroughly addressed and further optimized. In this work, we propose a model-based pre-OPC flow where the sizing of drawn patterns and placement of surrounding sub-resolution assist features (SRAF) are simultaneously generated in a single iteration using an ILT method. The complex patterns can then be simplified for a conventional OPC solution. | en_US |
| dc.identifier.doi | 10.1117/12.804678 | en_US |
| dc.identifier.isbn | 978-0-8194-7381-3 | en_US |
| dc.identifier.issn | 0277-786X | en_US |
| dc.identifier.journal | LITHOGRAPHY ASIA 2008 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1117/12.804678 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30353 | |
| dc.identifier.wosnumber | WOS:000289407400025 | |
| dc.language.iso | en_US | en_US |
| dc.subject | optical proximity correction | en_US |
| dc.subject | inverse lithography | en_US |
| dc.subject | sub-resolution assist features | en_US |
| dc.title | Model based Sub-Resolution Assist Features Using an Inverse Lithography Method | en_US |
| dc.type | Article | en_US |