Light emitting device with graded composition hole tunneling layer
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 08829652 | zh_TW |
| dc.contributor.author | Wang Chao-Hsun | en_US |
| dc.contributor.author | Kuo Hao-Chung | en_US |
| dc.date.accessioned | 2014-12-16T06:13:49Z | |
| dc.date.available | 2014-12-16T06:13:49Z | |
| dc.date.issued | 2014-09-09 | en_US |
| dc.description.abstract | A light emitting device with graded composition hole tunneling layer is provided. The device comprises a substrate and an n-type semiconductor layer is disposed on the substrate, in which the n-type semiconductor layer comprises a first portion and a second portion. A graded composition hole tunneling layer is disposed on the first portion of the n-type semiconductor layer. An electron blocking layer is disposed on the graded composition hole tunneling layer. A p-type semiconductor layer is disposed on the electron blocking layer. A first electrode is disposed on the p-type semiconductor layer, and a second electrode is disposed on the second portion of the n-type semiconductor layer and is electrical insulated from the first portion of the n-type semiconductor. The graded composition hole tunneling layer is used as the quantum-well to improve the transport efficiency of the holes to increase the light emitting efficiency of the light emitting device. | zh_TW |
| dc.identifier.govdoc | H01L033/00 | zh_TW |
| dc.identifier.govdoc | H01L029/06 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/104350 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Light emitting device with graded composition hole tunneling layer | zh_TW |
| dc.type | Patents | en_US |