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Direct observation of the lateral nonuniform channel doping profile in submicron MOSFET's from an anomalous charge pumping measurement results

dc.citation.epage104en_US
dc.citation.spage103en_US
dc.contributor.authorChung, SSen_US
dc.contributor.authorCheng, SMen_US
dc.contributor.authorLee, GHen_US
dc.contributor.authorGuo, JCen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:27:48Z
dc.date.available2014-12-08T15:27:48Z
dc.date.issued1995en_US
dc.identifier.doi10.1109/VLSIT.1995.520878en_US
dc.identifier.isbn0-7803-2602-4en_US
dc.identifier.journal1995 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/VLSIT.1995.520878en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/20048
dc.identifier.wosnumberWOS:A1995BE44J00052
dc.language.isoen_USen_US
dc.titleDirect observation of the lateral nonuniform channel doping profile in submicron MOSFET's from an anomalous charge pumping measurement resultsen_US
dc.typeProceedings Paperen_US

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