A 45nm 6b/cell Charge-Trapping Flash Memory Using LDPC-Based ECC and Drift-Immune Soft-Sensing Engine

dc.citation.epageU1056en_US
dc.citation.spage222en_US
dc.citation.volume56en_US
dc.citation.woscount1en_US
dc.contributor.authorHo, Kin-Chuen_US
dc.contributor.authorFang, Po-Chaoen_US
dc.contributor.authorLi, Hsiang-Pangen_US
dc.contributor.authorWang, Cheng-Yuan Michaelen_US
dc.contributor.authorChang, Hsie-Chiaen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.date.accessioned2016-03-28T00:05:45Z
dc.date.available2016-03-28T00:05:45Z
dc.date.issued2013-01-01en_US
dc.description.abstracten_US
dc.identifier.isbn978-1-4673-4513-2; 978-1-4673-4515-6en_US
dc.identifier.issn0193-6530en_US
dc.identifier.journal2013 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS (ISSCC)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/129819
dc.identifier.wosnumberWOS:000366612300091en_US
dc.language.isoen_USen_US
dc.titleA 45nm 6b/cell Charge-Trapping Flash Memory Using LDPC-Based ECC and Drift-Immune Soft-Sensing Engineen_US
dc.typeProceedings Paperen_US

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