Chemical vapor deposition of the hafnium oxynitride for use as HIGH-K materials in microelectronic devices.

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dc.citation.epageU887en_US
dc.citation.issueen_US
dc.citation.spageU887en_US
dc.citation.volume228en_US
dc.contributor.authorChuang, SHen_US
dc.contributor.authorChou, YHen_US
dc.contributor.authorChiu, HTen_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.date.accessioned2014-12-08T15:38:40Z
dc.date.available2014-12-08T15:38:40Z
dc.date.issued2004-08-22en_US
dc.identifier.issn0065-7727en_US
dc.identifier.journalABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETYen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/26460
dc.identifier.wosnumberWOS:000223712803739
dc.language.isoen_USen_US
dc.titleChemical vapor deposition of the hafnium oxynitride for use as HIGH-K materials in microelectronic devices.en_US
dc.typeMeeting Abstracten_US

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