Chemical vapor deposition of the hafnium oxynitride for use as HIGH-K materials in microelectronic devices.

Thumbnail Image

Date

2004-08-22

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

DOI

Abstract

Description

Keywords

Citation

URI

https://ir.lib.nycu.edu.tw/handle/11536/26460

Collections

會議論文;;Conferences Paper

Endorsement

Review

Supplemented By

Referenced By