Chemical vapor deposition of the hafnium oxynitride for use as HIGH-K materials in microelectronic devices.

Title:	Chemical vapor deposition of the hafnium oxynitride for use as HIGH-K materials in microelectronic devices.
Authors:	Chuang, SH Chou, YH Chiu, HT 應用化學系 Department of Applied Chemistry
Issue Date:	22-Aug-2004
URI:	http://hdl.handle.net/11536/26460
ISSN:	0065-7727
Journal:	ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY
Volume:	228
Issue:
Begin Page:	U887
End Page:	U887
Appears in Collections:	Conferences Paper