Chemical vapor deposition of the hafnium oxynitride for use as HIGH-K materials in microelectronic devices.

標題:	Chemical vapor deposition of the hafnium oxynitride for use as HIGH-K materials in microelectronic devices.
作者:	Chuang, SH Chou, YH Chiu, HT 應用化學系 Department of Applied Chemistry
公開日期:	22-八月-2004
URI:	http://hdl.handle.net/11536/26460
ISSN:	0065-7727
期刊:	ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY
Volume:	228
Issue:
起始頁:	U887
結束頁:	U887
顯示於類別：	會議論文