Investigation of the low dielectric siloxane-based hydrogen silsesquioxane (HSQ) as passivation layer on TFT-LCD
| dc.citation.epage | 377 | en_US |
| dc.citation.issue | 2-4 | en_US |
| dc.citation.spage | 374 | en_US |
| dc.citation.volume | 516 | en_US |
| dc.contributor.author | Chang, Ta-Shan | en_US |
| dc.contributor.author | Chang, Ting-Chang | en_US |
| dc.contributor.author | Liu, Po-Tsun | en_US |
| dc.contributor.author | Tsao, Shu-Wei | en_US |
| dc.contributor.author | Yeh, Feng-Sheng | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | 顯示科技研究所 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.contributor.department | Institute of Display | en_US |
| dc.date.accessioned | 2014-12-08T15:05:13Z | |
| dc.date.available | 2014-12-08T15:05:13Z | |
| dc.date.issued | 2007-12-03 | en_US |
| dc.description.abstract | Spin-on low-k passivation is achieved on inverted-staggered back-channel-etched hydrogenated amorphous silicon thin-film transistors (TFT). The low-k passivation material, siloxane-based hydrogen silsesquioxane (HSQ), has been investigated for different process temperatures. Performance is improved with decreased temperature. At 300 degrees C, the TFT performance of HSQ passivation is superior to those of other TFTs. The hydrogen bonds of HSQ assist hydrogen incorporation to eliminate the density of states between the back channel and the passivation layer. The characteristics of HSQ passivated TFT have been studied in this work. (C) 2007 Published by Elsevier B.V. | en_US |
| dc.identifier.doi | 10.1016/j.tsf.2007.08.014 | en_US |
| dc.identifier.issn | 0040-6090 | en_US |
| dc.identifier.journal | THIN SOLID FILMS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.tsf.2007.08.014 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3752 | |
| dc.identifier.wosnumber | WOS:000252037500051 | |
| dc.language.iso | en_US | en_US |
| dc.subject | TFT | en_US |
| dc.subject | passivation | en_US |
| dc.subject | low-k | en_US |
| dc.subject | HSQ | en_US |
| dc.title | Investigation of the low dielectric siloxane-based hydrogen silsesquioxane (HSQ) as passivation layer on TFT-LCD | en_US |
| dc.type | Article; Proceedings Paper | en_US |