Improved Performance of NILC Poly-Si Nanowire TFTs by Using Ni-Gettering
| dc.citation.epage | 172 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 169 | en_US |
| dc.citation.volume | 33 | en_US |
| dc.contributor.author | Wang, Bau-Ming | en_US |
| dc.contributor.author | Yang, Tzu-Ming | en_US |
| dc.contributor.author | Wu, YewChung Sermon | en_US |
| dc.contributor.author | Su, Chun-Jung | en_US |
| dc.contributor.author | Lin, Horng-Chih | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:29:42Z | |
| dc.date.available | 2014-12-08T15:29:42Z | |
| dc.date.issued | 2010 | en_US |
| dc.description.abstract | Nickel contamination inside nickel-metal induced lateral crystallization polycrystalline silicon is an issue to fabricate high performance nanowire thin film transistors. The phosphorous-doped alpha-Si/chem-SiO2 films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance of NILC poly-Si NW TFTs. It was found that the performance of NW TFTs was greatly improved after Ni-gettering process. | en_US |
| dc.identifier.doi | 10.1149/1.3481233 | en_US |
| dc.identifier.isbn | 978-1-60768-174-8 | en_US |
| dc.identifier.issn | 1938-5862 | en_US |
| dc.identifier.journal | THIN FILM TRANSISTORS 10 (TFT 10) | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.3481233 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21335 | |
| dc.identifier.wosnumber | WOS:000315444100020 | |
| dc.language.iso | en_US | en_US |
| dc.title | Improved Performance of NILC Poly-Si Nanowire TFTs by Using Ni-Gettering | en_US |
| dc.type | Proceedings Paper | en_US |