The Impact of Uniaxial Strain on Low Frequency Noise of Nanoscale PMOSFETs with e-SiGe and i-SiGe Source/Drain
| dc.citation.epage | 319 | en_US |
| dc.citation.issue | en_US | |
| dc.citation.spage | 316 | en_US |
| dc.citation.volume | en_US | |
| dc.contributor.author | Yeh, Kuo-Liang | en_US |
| dc.contributor.author | Hong, Wei-Lun | en_US |
| dc.contributor.author | Guo, Jyh-Chyum | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:39:04Z | |
| dc.date.available | 2014-12-08T15:39:04Z | |
| dc.date.issued | 2010-01-01 | en_US |
| dc.description.abstract | The impact of uni-axial strain from embedded SiGe in recessed S/D (e-SiGe) and Ge implanted S/D (i-SiGe) on effective mobility mu(eff), gate leakage current, short channel effect (SCE) and low frequency noise (LFN) in pMOS has been investigated. The e-SiGe can realize superior mu(eff) enhancement but lead to worse SeE and LFN. The i-SiGe can reduce SeE and LFN but suffers limited mu(eff) improvement. Mobility fluctuation model can explain the trade-off and forward body biases (FBB) method can overcome the trade-off. SiGe strain combined with FBB is an effective solution in nanoscale pMOS to enhance RF and analog performance. | en_US |
| dc.identifier.isbn | 978-1-4244-6057-1 | en_US |
| dc.identifier.issn | 0149-645X | en_US |
| dc.identifier.journal | 2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26720 | |
| dc.identifier.wosnumber | WOS:000288196500082 | |
| dc.language.iso | en_US | en_US |
| dc.title | The Impact of Uniaxial Strain on Low Frequency Noise of Nanoscale PMOSFETs with e-SiGe and i-SiGe Source/Drain | en_US |
| dc.type | Article | en_US |
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