Co-sputtered Cu/Ti Bonded Interconnects for 3D Integration Applications
| dc.contributor.author | Chen, Hsiao-Yu | en_US |
| dc.contributor.author | Hsu, Sheng-Yao | en_US |
| dc.contributor.author | Chen, Kuan-Neng | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:32:43Z | |
| dc.date.available | 2014-12-08T15:32:43Z | |
| dc.date.issued | 2013 | en_US |
| dc.description.abstract | Investigation of co-sputtered Cu/Ti as bonded interconnects for 3D integration is presented in this paper. The proposed structure has the features of self-formed adhesion layer, Cu as major bonding/conducting material, and potential Ti oxide as sidewall passivation. The excellent electrical performance and high electrical stability against humidity and electro-migration of this structure are achieved. | en_US |
| dc.identifier.isbn | 978-1-4673-3082-4 | en_US |
| dc.identifier.issn | 1524-766X | en_US |
| dc.identifier.journal | 2013 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/22853 | |
| dc.identifier.wosnumber | WOS:000326324800046 | |
| dc.language.iso | en_US | en_US |
| dc.subject | 3D integration | en_US |
| dc.subject | co-sputtered metal bonding | en_US |
| dc.subject | self-formed adhesion layer | en_US |
| dc.title | Co-sputtered Cu/Ti Bonded Interconnects for 3D Integration Applications | en_US |
| dc.type | Proceedings Paper | en_US |
Files
License bundle
1 - 1 of 1
Loading...
- Name:
- license.txt
- Size:
- 1.71 KB
- Format:
- Item-specific license agreed to upon submission
- Description: