Optimization of gate insulator material for GaN MIS-HEMT
| dc.citation.epage | 118 | en_US |
| dc.citation.spage | 115 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Lin, Y. C. | en_US |
| dc.contributor.author | Lin, T. W. | en_US |
| dc.contributor.author | Wu, C. H. | en_US |
| dc.contributor.author | Yao, J. N. | en_US |
| dc.contributor.author | Hsu, H. T. | en_US |
| dc.contributor.author | Shih, W. C. | en_US |
| dc.contributor.author | Kakushima, K. | en_US |
| dc.contributor.author | Tsutsui, K. | en_US |
| dc.contributor.author | Iwai, H. | en_US |
| dc.contributor.author | Chang, E. Y. | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 光電系統研究所 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | 國際半導體學院 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Institute of Photonic System | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.contributor.department | International College of Semiconductor Technology | en_US |
| dc.date.accessioned | 2017-04-21T06:49:24Z | |
| dc.date.available | 2017-04-21T06:49:24Z | |
| dc.date.issued | 2016 | en_US |
| dc.description.abstract | Metal-insulator-semiconductor (M-I-S) structure has been employed for GaN HEMTs to suppress gate leakage current. In this work, various gate insulator materials including SiO2, HfO2, La2O3, HfO2/SiO2 and La2O3/SiO2 were investigated for GaN MIS-HEMT application. It is found that GaN MIS-HEMT with La2O3/SiO2 composite oxide results in better device performance and reliability as compared to other gate insulator materials. | en_US |
| dc.identifier.isbn | 978-1-4673-8770-5 | en_US |
| dc.identifier.journal | 2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/134542 | |
| dc.identifier.wosnumber | WOS:000392269000028 | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | SiO2 | en_US |
| dc.subject | La2O3 | en_US |
| dc.subject | MIS | en_US |
| dc.subject | Ga HEMT | en_US |
| dc.subject | power device | en_US |
| dc.title | Optimization of gate insulator material for GaN MIS-HEMT | en_US |
| dc.type | Proceedings Paper | en_US |
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