<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css"> Skip to main content

830nm Graded Index Double Barrier Separate Confinement Heterostructure Laser Diodes with Small Vertical Divergence and Temperature Insensitive Characteristics

dc.citation.epage77en_US
dc.citation.spage76en_US
dc.contributor.authorHung, Chih-Tsangen_US
dc.contributor.authorHo, Tsong-Linen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:30:07Z
dc.date.available2014-12-08T15:30:07Z
dc.date.issued2012en_US
dc.identifier.isbn978-1-4577-0828-2en_US
dc.identifier.issn2326-5442en_US
dc.identifier.journal2012 23RD IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/21589
dc.identifier.wosnumberWOS:000316820100039
dc.language.isoen_USen_US
dc.title830nm Graded Index Double Barrier Separate Confinement Heterostructure Laser Diodes with Small Vertical Divergence and Temperature Insensitive Characteristicsen_US
dc.typeProceedings Paperen_US

Files

License bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed to upon submission
Description: