A 0.6V 200kHz Silicon Oscillator with Temperature Compensation for Wireless Sensing Applications

dc.contributor.author	Yu, Chien-Ying	en_US
dc.contributor.author	Lee, Chen Yi	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.date.accessioned	2014-12-08T15:20:29Z
dc.date.available	2014-12-08T15:20:29Z
dc.date.issued	2011	en_US
dc.description.abstract	This paper presents a silicon oscillator suitable for low-cost and low-power wireless sensing applications. With the comparisons of ring oscillators in different temperature coefficients, the frequency of an internal ring oscillator is estimated and parameterized by a second-order polynomial. Accordingly, the output clock is compensated in a frequency division fashion. The oscillator is implemented in 90-nm CMOS technology with an area of 0.04mm(2). Operating at 0.6V, the output frequency is within 200+/-1kHz over the temperature range of -25 degrees C to 125 degrees C with power consumption of 48 mu W.	en_US
dc.identifier.isbn	978-1-61284-857-0	en_US
dc.identifier.issn	1548-3746	en_US
dc.identifier.journal	2011 IEEE 54TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS)	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/14577
dc.identifier.wosnumber	WOS:000296057200021
dc.language.iso	en_US	en_US
dc.title	A 0.6V 200kHz Silicon Oscillator with Temperature Compensation for Wireless Sensing Applications	en_US
dc.type	Proceedings Paper	en_US

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