Ferroelectric memory structure and fabrication method thereof
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20040145003 | zh_TW |
| dc.contributor.author | Tseung-Yuen, Tseng | en_US |
| dc.contributor.author | S.Y., Lee | en_US |
| dc.date.accessioned | 2014-12-16T06:16:19Z | |
| dc.date.available | 2014-12-16T06:16:19Z | |
| dc.date.issued | 2004-07-29 | en_US |
| dc.description.abstract | A ferroelectric memory structure is disclosed. The ferroelectric memory structure includes a substrate, an insulating layer formed on the substrate, a plurality of oxide electrodes formed on the insulating layer, a ferroelectric layer formed on the insulating layer and the plurality of oxide electrodes, and a plurality of metallic electrodes formed on the ferroelectric layer and corresponding to the plurality of the oxide electrodes. | zh_TW |
| dc.identifier.govdoc | H01L029/76 | zh_TW |
| dc.identifier.govdoc | H01L029/94 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105771 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | Ferroelectric memory structure and fabrication method thereof | zh_TW |
| dc.type | Patents | en_US |