Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices

dc.citation.epage	108	en_US
dc.citation.spage	107	en_US
dc.contributor.author	Hsueh, C. Y.	en_US
dc.contributor.author	Huang, T. L.	en_US
dc.contributor.author	Peng, K. P.	en_US
dc.contributor.author	Kuo, M. H.	en_US
dc.contributor.author	Lin, H. C.	en_US
dc.contributor.author	Li, Pei-Wen	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.date.accessioned	2018-08-21T05:57:01Z
dc.date.available	2018-08-21T05:57:01Z
dc.date.issued	2017-01-01	en_US
dc.description.abstract	We have successfully exploited multi-dimensional spaces of concentrations of the interstitial species, Si and Ge, geometries and compositions of the starting SiGe nano-pillar, and sources of Si interstitials (the Si3N4 and Si encapsulation layers) to create new classes of exciting optical and electronic devices such as single-electron tunneling devices, wavelength tunable photodetectors, and MOSFETs.	en_US
dc.identifier.issn	2161-4636	en_US
dc.identifier.journal	2017 SILICON NANOELECTRONICS WORKSHOP (SNW)	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/146936
dc.identifier.wosnumber	WOS:000425209200054	en_US
dc.language.iso	en_US	en_US
dc.title	Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices	en_US
dc.type	Proceedings Paper	en_US

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