Dual band CMOS power amplifier for WLAN applications

dc.citation.epage	1230	en_US
dc.citation.spage	1227	en_US
dc.contributor.author	Jou, CF	en_US
dc.contributor.author	Cheng, KH	en_US
dc.contributor.author	Lin, CM	en_US
dc.contributor.author	Chen, JL	en_US
dc.contributor.department	傳播研究所	zh_TW
dc.contributor.department	Institute of Communication Studies	en_US
dc.date.accessioned	2014-12-08T15:26:04Z
dc.date.available	2014-12-08T15:26:04Z
dc.date.issued	2003	en_US
dc.description.abstract	A 2.4 GHz / 5.2 GHz dual band CMOS power amplifier (PA) with a 21-dBm output power using 0.25 - mu m 1P5M standard CMOs process is described. In this paper, we present a CMOs PA with a single input and a single output signal chain which simultaneously optimized for wireless local area network (WLAN) 2.4 GHz / 5.2 GHz applications designed on Rogers RO4003 printed-circuit-board (PCB). The simulated dual-band PA biased at Class-A exhibiting P-1dB = 21dBm in both 2.4 GHz and 5.2 GHz with power added efficiency (PAE) = 26% and PAE = 18% separately. The performances of the designed PA presents the standard CMOs process has the potential for the PAs of 2.4 GHz / 5.2 GHz WLAN applications.	en_US
dc.identifier.isbn	0-7803-8294-3	en_US
dc.identifier.journal	Proceedings of the 46th IEEE International Midwest Symposium on Circuits & Systems, Vols 1-3	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/18478
dc.identifier.wosnumber	WOS:000234964300301
dc.language.iso	en_US	en_US
dc.title	Dual band CMOS power amplifier for WLAN applications	en_US
dc.type	Proceedings Paper	en_US

Files

Now showing 1 - 1 of 1