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主動式可調變電流之薄膜電晶體結構

dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber200710813zh_TW
dc.contributor.author林彥仲en_US
dc.contributor.author黃建智en_US
dc.contributor.author楊佳峰en_US
dc.contributor.author王俊雄en_US
dc.contributor.author謝漢萍en_US
dc.contributor.author陳培銘en_US
dc.contributor.author魏燕伶en_US
dc.contributor.author王安志en_US
dc.date.accessioned2014-12-16T06:13:23Z
dc.date.available2014-12-16T06:13:23Z
dc.date.issued2007-03-16en_US
dc.description.abstract本發明係為一主動式可調變電流之薄膜電晶體電路結構,特別是應用在主動式發光元件與其顯示陣列面板的畫素電路。本發明結構包括電流源、資料線、掃描線、直流電壓訊號線、複數儲存電容、複數開關電晶體與一驅動電晶體。其中複數儲存電容形成串聯結構,其功能為畫素電路由開啓期間轉為關閉期間時,其中一儲存電容因負回授效應而使得該等儲存電容間的節點的電位下降,進而使得流經發光元件之電流下降,以實現電流調變功能。複數開關電晶體功能為開關功能,以作為控制該電流源之電流方向。zh_TW
dc.identifier.govdocG09G003/32zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/104107
dc.language.isozh_TWen_US
dc.title主動式可調變電流之薄膜電晶體結構zh_TW
dc.typePatentsen_US

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