Enhancement of the stability of resistive switching characteristics by conduction path reconstruction

dc.citation.epageen_US
dc.citation.issue4en_US
dc.citation.volume103en_US
dc.citation.woscount3
dc.contributor.authorHuang, Jheng-Jieen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorYu, Chih-Chengen_US
dc.contributor.authorHuang, Hui-Chunen_US
dc.contributor.authorChen, Yu-Tingen_US
dc.contributor.authorTseng, Hsueh-Chihen_US
dc.contributor.authorYang, Jyun-Baoen_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorGan, Der-Shinen_US
dc.contributor.authorChu, Ann-Kuoen_US
dc.contributor.authorLin, Jian-Yangen_US
dc.contributor.authorTsai, Ming-Jinnen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:31:09Z
dc.date.available2014-12-08T15:31:09Z
dc.date.issued2013-07-22en_US
dc.description.abstractIn this study, a Pt/BiFeO3/TiN device was fabricated and the resistance switching characteristics were investigated. After the first forming process, the conduction path was formed and exhibited unstable bipolar switching characteristics. Subsequently, the original conduction path was destroyed thoroughly by high negative bias. By reconstructing the conduction path after a second forming process (re-forming process), the device exhibits stable bipolar switching characteristics. Transmission electron microscopy analysis indicates that the stability of switching behavior was enhanced because of the joule heating effect, and is an easy way to improve the resistance switching characteristics. (C) 2013 AIP Publishing LLC.en_US
dc.identifier.doi10.1063/1.4816269en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4816269en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/22183
dc.identifier.wosnumberWOS:000322406600070
dc.language.isoen_USen_US
dc.titleEnhancement of the stability of resistive switching characteristics by conduction path reconstructionen_US
dc.typeArticleen_US

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