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Organic thin-film transistors with reduced-photosensitivity

dc.citation.epage738en_US
dc.citation.spage735en_US
dc.contributor.authorChuang, Chiao-Shunen_US
dc.contributor.authorTsai, Shu-Tingen_US
dc.contributor.authorChen, Fang-Chungen_US
dc.contributor.authorShieh, Han-Ping D.en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:24:38Z
dc.date.available2014-12-08T15:24:38Z
dc.date.issued2006en_US
dc.description.abstractOrganic thin-film transistors (OTFTs) with reduced-photosensitivity have been made by blending titanium dioxide (TiO(2)) nanoparticles into the polymer dielectric layer. The minimized shift of threshold voltage and more stable photocurrent are attributed to the introduction of recombination centers induced by the doping of TiO(2) nanoparticles. The localized energy levels deep in the energy gap and away from highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) of pentacene may serve as the recombination centers, which can enhance substantially the recombination process in the OTFTs.en_US
dc.identifier.journalIDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/17115
dc.identifier.wosnumberWOS:000258482700187
dc.language.isoen_USen_US
dc.titleOrganic thin-film transistors with reduced-photosensitivityen_US
dc.typeProceedings Paperen_US

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