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SURFACE-EMITTING LASER DEVICE

dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20110044365zh_TW
dc.contributor.authorChen, Shih-Weien_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-16T06:15:27Z
dc.date.available2014-12-16T06:15:27Z
dc.date.issued2011-02-24en_US
dc.description.abstractA surface-emitting laser device includes: a substrate; a low refractive index layer with a refractive index nL and disposed on the substrate; a light emitting layered structure with a refractive index nH, where nH>nL, the light emitting layered structure being formed on the low refractive index layer and having first and second semiconductor layers and a multi-quantum well (MQW) disposed between the first and second semiconductor layers and capable of generating photons having a wavelength λ0; and a two-dimensional photonic crystal (2DPC) formed in the light emitting layered structure and having optical nanostructures arranged into a periodic pattern with a lattice constant a. The nanostructures extend from the first semiconductor layer through the MQW. The 2DPC has a normalized frequency, which is defined as a/λ0, ranging from 0.25 to 0.70.zh_TW
dc.identifier.govdocH01S005/34zh_TW
dc.identifier.govdocH01S005/323zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/105334
dc.language.isozh_TWen_US
dc.titleSURFACE-EMITTING LASER DEVICEzh_TW
dc.typePatentsen_US

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