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Low Efficiency Droop Green Nano-Pyramid {10(1)over-bar1} InGaN/GaN Multiple Quantum Well LED

dc.citation.woscount0en_US
dc.contributor.authorChang, Shih-Pangen_US
dc.contributor.authorXiong, Kang-linen_US
dc.contributor.authorLin, Da-Weien_US
dc.contributor.authorCheng, Yuh-Jenen_US
dc.contributor.authorHan, Jungen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.department電機學院zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2017-04-21T06:49:14Z
dc.date.available2017-04-21T06:49:14Z
dc.date.issued2014en_US
dc.description.abstractWe report a low efficiency droop 520 nm green nano-pyramid InGaN/GaN multiple quantum well (MQW) LED. MQWs were grown on the semipolar {10 (1) over bar1} nano-pyramid facets. The device physics will be discussed in details.en_US
dc.identifier.issn2160-9020en_US
dc.identifier.journal2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/136173
dc.identifier.wosnumberWOS:000369908601343en_US
dc.language.isoen_USen_US
dc.titleLow Efficiency Droop Green Nano-Pyramid {10(1)over-bar1} InGaN/GaN Multiple Quantum Well LEDen_US
dc.typeProceedings Paperen_US

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