High Performance Metal/Insulator/Metal Capacitors Using HfTiO as Dielectric
| dc.citation.epage | 68 | en_US |
| dc.citation.spage | 67 | en_US |
| dc.contributor.author | Hsu, Hsiao-Hsuan | en_US |
| dc.contributor.author | Cheng, Chun-Hu | en_US |
| dc.contributor.author | Tsui, Bing-Yue | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:24:27Z | |
| dc.date.available | 2014-12-08T15:24:27Z | |
| dc.date.issued | 2009 | en_US |
| dc.description.abstract | Hafnium titanate (HfTiO) film was adapted as the insulator of MIM capacitors for RF/Analog ICs applications. Low leakage current of 3.4x10(-8) A/cm(2) at -IV and high capacitance density of 17.5fF/mu m(2) were obtained. A N(2)-plasma treatment on HfTiO films can further reduce leakage current by two orders of magnitude and no apparent degradation is observed on the capacitance density and voltage coefficient of capacitance (VCC) properties. Capacitance density of 5.1fF/mu m(2), leakage current of 1.3x10(-9)A/cm(2), and parabolic VCC value of 40ppm/V(2) can be achieved by 51nm thick HfTiO film. These results meet the RF/analog requirements in 2012 predicted by ITRS. | en_US |
| dc.identifier.isbn | 978-1-4244-2784-0 | en_US |
| dc.identifier.journal | PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/16965 | |
| dc.identifier.wosnumber | WOS:000272451000029 | |
| dc.language.iso | en_US | en_US |
| dc.title | High Performance Metal/Insulator/Metal Capacitors Using HfTiO as Dielectric | en_US |
| dc.type | Proceedings Paper | en_US |
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