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INTERFACE TRAP INDUCED THERMIONIC AND FIELD EMISSION CURRENT IN OFF-STATE MOSFETS

dc.citation.epage164en_US
dc.citation.spage161en_US
dc.contributor.authorWANG, THen_US
dc.contributor.authorCHANG, TEen_US
dc.contributor.authorHUANG, CMen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:27:51Z
dc.date.available2014-12-08T15:27:51Z
dc.date.issued1994en_US
dc.identifier.isbn0-7803-2111-1en_US
dc.identifier.journalINTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGESTen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/20108
dc.identifier.wosnumberWOS:A1994BC55U00036
dc.language.isoen_USen_US
dc.titleINTERFACE TRAP INDUCED THERMIONIC AND FIELD EMISSION CURRENT IN OFF-STATE MOSFETSen_US
dc.typeProceedings Paperen_US

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