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ESD protection design for fully integrated CMOS RF power amplifiers with waffle-structured SCR

dc.citation.epage1295en_US
dc.citation.spage1292en_US
dc.contributor.authorKer, Ming-Douen_US
dc.contributor.authorLin, Chun-Yuen_US
dc.contributor.authorMeng, Guo-Xuanen_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.date.accessioned2014-12-08T15:46:07Z
dc.date.available2014-12-08T15:46:07Z
dc.date.issued2008en_US
dc.description.abstractWaffle-structured SCR (silicon-controlled rectifier) has been studied as an effective on-chip ESD (electrostatic discharge) protection device for CMOS RIF (radio-frequency) circuits. In this work, a novel on-chip ESD protection strategy using the waffle-structured SCR is proposed and co-designed with a CMOS UWB (ultra-wideband) PA (power amplifier). Before ESD stress, the RIF performances of the ESD-protected PA have been demonstrated to be as well as that of the unprotected PA. After ESD stress, the unprotected PA was seriously degraded, whereas the ESD-protected PA was keeping the performances well.en_US
dc.identifier.isbn978-1-4244-2078-0en_US
dc.identifier.issn0271-4302en_US
dc.identifier.journalPROCEEDINGS OF 2008 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-10en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/31020
dc.identifier.wosnumberWOS:000258532101054
dc.language.isoen_USen_US
dc.titleESD protection design for fully integrated CMOS RF power amplifiers with waffle-structured SCRen_US
dc.typeArticleen_US

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