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超高真空化學氣相沉積低溫新穎複晶矽薄膜電晶體之製作與可靠度的研究---總計畫 (III)

dc.contributor.author張俊彥en_US
dc.contributor.authorCHANG CHUN-YENen_US
dc.contributor.department國立交通大學電子工程學系zh_TW
dc.date.accessioned2014-12-13T10:35:29Z
dc.date.available2014-12-13T10:35:29Z
dc.date.issued2000en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC89-2218-E009-087zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=597417&docId=112582en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/93463
dc.language.isozh_TWen_US
dc.title超高真空化學氣相沉積低溫新穎複晶矽薄膜電晶體之製作與可靠度的研究---總計畫 (III)zh_TW
dc.titleStudy of UHVCVD Deposited Poly-Si TFTs with Low Temperature Gate Dielectric and Novel Structure(III)en_US
dc.typePlanen_US

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