MILC-TFT With High-kappa Dielectrics for One-Time-Programmable Memory Application
| dc.citation.epage | 956 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 954 | en_US |
| dc.citation.volume | 30 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Chiang, Tsung-Yu | en_US |
| dc.contributor.author | Ma, Ming-Wen | en_US |
| dc.contributor.author | Wu, Yi-Hong | en_US |
| dc.contributor.author | Kuo, Po-Yi | en_US |
| dc.contributor.author | Wang, Kuan-Ti | en_US |
| dc.contributor.author | Liao, Chia-Chun | en_US |
| dc.contributor.author | Yeh, Chi-Ruei | en_US |
| dc.contributor.author | Chao, Tien-Sheng | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:08:49Z | |
| dc.date.available | 2014-12-08T15:08:49Z | |
| dc.date.issued | 2009-09-01 | en_US |
| dc.description.abstract | In this letter, for the first time, one-time-programmable (OTP) memory fabricated on the low-temperature poly-Si p-cbannel thin-film transistor (TFT) with metal-induced lateral-crystallization channel layer and high-kappa dielectrics is demonstrated. The state of this OTP memory can be identified by the scheme of gate-induced drain leakage current measurement. The OTP-TFT memory has good electrical characteristics in terms of low threshold voltage V(th) similar to -0.78 V, excellent subthreshold swing similar to 105 mV/dec, low operation voltage, faster programming speeds, and excellent reliability characteristics. | en_US |
| dc.identifier.doi | 10.1109/LED.2009.2027035 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2009.2027035 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/6729 | |
| dc.identifier.wosnumber | WOS:000269443000021 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Gate-induced drain leakage (GIDL) | en_US |
| dc.subject | metal-induced lateral crystallization (MILC) | en_US |
| dc.subject | one-time programmable (OTP) | en_US |
| dc.subject | thin-film transistor (TFT) | en_US |
| dc.title | MILC-TFT With High-kappa Dielectrics for One-Time-Programmable Memory Application | en_US |
| dc.type | Article | en_US |